16+
ISSN 2687-0568

Volume 3 No 2 2021

1.

Current State of Ga2O3-Based Electronic and Optoelectronic
Devices. Brief Review

A.A. Petrenko, Ya.N. Kovach, D.A. Bauman, M.A. Odnoblyudov, V. E. Bougrov and A. E. Romanov
pages 1-26
2.

Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest

M.G. Mynbaeva
pages 27-38
3.

A Review on Accommodation Processes in Non-Equilibrium Grain Boundaries

D.V. Bachurin and A.A. Nazarov
pages 39-52
4.

Nuclear Geometry: from Silicon to Argon

A.I. Melker
pages 53-78
5.

Collective Migration of Low-Angle Tilt Boundaries Near Crack Tips in Nanocrystalline Metals under Fatigue Load

Ya.V. Konakov and A.G. Sheinerman
pages 79-86
6.

Review on Theoretical Models of Void Evolution in Crystalline Particles

S.A. Krasnitskii and M.Yu. Gutkin
pages 87-156