Volume 3 No 2 2021
1.
Current State of Ga2O3-Based Electronic and Optoelectronic
Devices. Brief Review
A.A. Petrenko, Ya.N. Kovach, D.A. Bauman, M.A. Odnoblyudov, V. E. Bougrov and A. E. Romanov
pages 1-26
2.
Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest
M.G. Mynbaeva
pages 27-38
3.
A Review on Accommodation Processes in Non-Equilibrium Grain Boundaries
D.V. Bachurin and A.A. Nazarov
pages 39-52
4.
Collective Migration of Low-Angle Tilt Boundaries Near Crack Tips in Nanocrystalline Metals under Fatigue Load
Ya.V. Konakov and A.G. Sheinerman
pages 53-59
5.
Nuclear Geometry: from Silicon to Argon
A.I. Melker
pages 60-86